? semiconductor components industries, llc, 2007 november, 2007 - rev. 7 1 publication order number: TIP41a/d TIP41, TIP41a, TIP41b, TIP41c (npn); tip42, tip42a, tip42b, tip42c (pnp) complementary silicon plastic power transistors designed for use in general purpose amplifier and switching applications. features ? esd ratings: machine model, c; > 400 v human body model, 3b; > 8000 v ? epoxy meets ul 94 v-0 @ 0.125 in ? pb-free packages are available* maximum ratings rating symbol value unit collector-emitter voltage TIP41, tip42 TIP41a, tip42a TIP41b, tip42b TIP41c, tip42c v ceo 40 60 80 100 vdc collector-base voltage TIP41, tip42 TIP41a, tip42a TIP41b, tip42b TIP41c, tip42c v cb 40 60 80 100 vdc emitter-base voltage v eb 5.0 vdc collector current- continuous peak i c 6.0 10 adc base current i b 2.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 65 0.52 w w/ c total power dissipation @ t a = 25 c derate above 25 c p d 2.0 0.016 w w/ c unclamped inductive load energy (note 1) e 62.5 mj operating and storage junction, temperature range t j , t stg C65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction-to-case r jc 1.67 c/w thermal resistance, junction-to-ambient r ja 57 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. i c = 2.5 a, l = 20 mh, p.r.f. = 10 hz, v cc = 10 v, r be = 100 . *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to-220ab case 221a style 1 marking diagram 6 ampere complementary silicon power transistors 40-60-80-100 volts, 65 watts http://onsemi.com 1 2 3 4 tip4xx = device code xx = 1, 1a, 1b, 1c 2, 2a, 2b, 2c a = assembly location y = year ww = work week g = pb-free package tip4xxg ayww see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information
TIP41, TIP41a, TIP41b, TIP41c (npn); tip42, tip42a, tip42b, tip42c (pnp) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector-emitter sustaining voltage (note 2) TIP41, tip42 (i c = 30 madc, i b = 0) TIP41a, tip42a TIP41b, tip42b TIP41c, tip42c v ceo(sus) 40 60 80 100 - - - - vdc collector cutoff current (v ce = 30 vdc, i b = 0) TIP41, TIP41a, tip42, tip42a (v ce = 60 vdc, i b = 0) TIP41b, TIP41c, tip42b, tip42c i ceo - - 0.7 0.7 madc collector cutoff current (v ce = 40 vdc, v eb = 0) TIP41, tip42 (v ce = 60 vdc, v eb = 0) TIP41a, tip42a (v ce = 80 vdc, v eb = 0) TIP41b, tip42b (v ce = 100 vdc, v eb = 0) TIP41c, tip42c i ces - - - - 400 400 400 400 adc emitter cutoff current (v be = 5.0 vdc, i c = 0) i ebo - 1.0 madc on characteristics (note 2) dc current gain (i c = 0.3 adc, v ce = 4.0 vdc) dc current gain (i c = 3.0 adc, v ce = 4.0 vdc) h fe 30 15 - 75 - collector-emitter saturation voltage (i c = 6.0 adc, i b = 600 madc) v ce(sat) - 1.5 vdc base-emitter on voltage (i c = 6.0 adc, v ce = 4.0 vdc) v be(on) - 2.0 vdc dynamic characteristics current-gain bandwidth product (i c = 500 madc, v ce = 10 vdc, f test = 1.0 mhz) f t 3.0 - mhz small-signal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 khz) h fe 20 - - 2. pulse test: pulse width 300 s, duty cycle 2.0%. ordering information device package shipping TIP41 to-220 50 units / rail TIP41g to-220 (pb-free) 50 units / rail TIP41a to-220 50 units / rail TIP41ag to-220 (pb-free) 50 units / rail TIP41b to-220 50 units / rail TIP41bg to-220 (pb-free) 50 units / rail TIP41c to-220 50 units / rail TIP41cg to-220 (pb-free) 50 units / rail tip42 to-220 50 units / rail tip42g to-220 (pb-free) 50 units / rail tip42a to-220 50 units / rail tip42ag to-220 (pb-free) 50 units / rail tip42b to-220 50 units / rail tip42bg to-220 (pb-free) 50 units / rail tip42c to-220 50 units / rail tip42cg to-220 (pb-free) 50 units / rail
TIP41, TIP41a, TIP41b, TIP41c (npn); tip42, tip42a, tip42b, tip42c (pnp) http://onsemi.com 3 figure 1. power derating t, temperature ( c) 0 100 0 20 160 40 60 60 80 40 140 80 figure 2. switching time test circuit 0.06 figure 3. turn-on time i c , collector current (amp) 0.02 0.4 6.0 0.07 1.0 4.0 t j = 25 c v cc = 30 v i c /i b = 10 t, time (s) 0.5 0.3 0.1 0.05 0.1 0.6 1.0 t d @ v be(off) 5.0 v 0.03 0.7 2.0 0.2 2.0 t r 20 120 p d , power dissipation (watts) t c t c 0 1.0 2.0 3.0 4.0 t a t a +11 v 25 s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 0.2
TIP41, TIP41a, TIP41b, TIP41c (npn); tip42, tip42a, tip42b, tip42c (pnp) http://onsemi.com 4 t, time (ms) 1.0 0.01 0.01 0.1 r(t), transient thermal resistance (normalized) 1.0 1.0 100 z jc(t) = r(t) r jc r jc = 1.92 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 single pulse 1.0 k d = 0.5 0.2 0.05 duty cycle, d = t 1 /t 2 figure 4. thermal response 0.1 0.05 0.02 0.01 0.03 0.02 0.07 0.5 0.3 0.2 0.7 0.02 0.05 0.2 0.5 2.0 5.0 200 500 10 20 50 v ce , collector-emitter voltage (volts) 10 20 5.0 60 100 figure 5. active-region safe operating area 0.2 0.1 0.5 secondary breakdown ltd bonding wire ltd thermal limitation @ t c = 25 c (single pulse) 1.0ms 2.0 1.0 10 5.0 i c , collector current (amp) 0.5ms curves apply below rated v ceo 3.0 0.3 40 80 5.0ms t j = 150 c TIP41, tip42 TIP41a, tip42a TIP41b, tip42b TIP41c, tip42c there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c - v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values l ess than the limitations imposed by second breakdown. 0.1 0.4 0.6 4.0 0.06 1.0 2.0 0.2 i c , collector current (amp) figure 6. turn-off time 5.0 t, time (s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 6.0 1.0 3.0 5.0 20 0.5 10 2.0 v r , reverse voltage (volts) figure 7. capacitance 300 c, capacitance (pf) 200 100 70 50 30 30 50 t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 c ib c ob 3.0 t s t f t j = 25 c
TIP41, TIP41a, TIP41b, TIP41c (npn); tip42, tip42a, tip42b, tip42c (pnp) http://onsemi.com 5 v ce , collector-emitter voltage (volts) t j , junction temperature ( c) 10 3 -0.3 10 1 10 0 10 -2 10 2 10 -1 10 -3 10m 100k 10k 0.1k 1.0m 1.0k i b , base current (ma) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. collector saturation region i c , collector current (amp) 300 500 0.1 0.2 0.4 6.0 0.06 100 70 50 30 10 7.0 0.3 v be , base-emitter voltage (volts) figure 10. ?on? voltages v ce = 2.0 v 5.0 1.0 2.0 0.6 1.6 2.0 20 30 100 1000 10 0.8 0.4 50 0 300 500 200 25 c t j = 150 c -55 c 1.2 2.0 0.06 i c , collector current (amp) 1.6 0.8 1.2 0.4 0 0.1 0.2 0.3 0.4 0.6 1.0 +2.5 i c = 1.0 a 20 60 80 100 120 160 140 40 v, voltage (volts) t j = 25 c 2.5 a 5.0 a 2.0 3.0 4.0 6.0 v be(sat) @ i c /i b = 10 v be @ v ce = 4.0 v v ce(sat) @ i c /i b = 10 v , temperature coefficients (mv/ c) +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 *applies for i c /i b h fe /4 * vc for v ce(sat) vb for v be figure 11. temperature coefficients , collector current (a) i c -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 figure 12. collector cut-off region figure 13. effects of base-emitter resistance v ce = 30 v t j = 150 c 100 c 25 c reverse forward i c = i ces r be , external base-emitter resistance (ohms) v ce = 30 v i c = 10 x i ces i c i ces i c = 2 x i ces (typical i ces values obtained from figure 12) 200 20 4.0 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0 +25 c to +150 c -55 c to +25 c +25 c to +150 c -55 c to +25 c +0.7 t j = 25 c
TIP41, TIP41a, TIP41b, TIP41c (npn); tip42, tip42a, tip42b, tip42c (pnp) http://onsemi.com 6 package dimensions to-220 case 221a-09 issue ae notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane -t- c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 TIP41a/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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